Considering characteristics of multi-functional electronics products, various electronic components shalle be mounted on a single substrate. Recently, a heat dissipating problem caused by heat generating elements mounted on the substrate has been an issue.
The heat-radiating substrate including an insulating layer formed on a metal core layer and a circuit layer formed on the insulating layer have been commercialized up to now. The heat-radiating substrate has excellent heat-radiating property as compared to a general organic PCB; however, it is difficult to implement high density/integration of the heat-radiating substrate.
In addition, when heat generating elements such as LED and electronic components vulnerable to heat (hereinafter, thermally weakened elements) are simultaneously mounted on a single substrate, the above-mentioned heat-radiating substrate has high thermal conductivity, such that heat generated from the heat generating elements is transferred to the entire heat-radiating substrate (in particular, through a metal core layer) and is also transferred to an area where heat is not transferred, thereby degrading the performance of the thermally weakened elements.
Electrochemical aluminum oxide technology is a technology based on a combination of the process of anodic oxidation (anodization) of aluminum with well-mastered microelectronic base operations (vacuum metal deposition and photolithography) for use in electrical engineering, electronics and semiconductor industries.
The necessity of fast and efficient heat dissipation is one of the major problems of semiconductor devices and LED lamps. One way to solve the problem – the use in the manufacture of circuit boards the selective stepwise oxidation of aluminum.
Substrates manufactured with this technology are made of two main parts: an aluminum or copper conducting layer and a dielectric material with nanopourous structure. The dielectric material creates the considerable competitive advantage of these substrate over those made with traditional technology.
Currently, the main area of technology application is LED lamps which have significant advantages in comparison with traditional light sources. But their main problem is that the crystal that radiates light heats significantly when lit. When the temperature of the crystal increases, its light efficiency decreases and the service life of the LED lamp shortens.
The technology allows decreasing the temperature of the crystal by means of fast heat dissipation. The base of the technology is the process of selective stepped deep aluminum oxidation, the core of which isto receive a dielectric layer on the surface of the metal and in its depth. This approach allowed creating a new type of inexpensive commutating plates with high thermal conductivity.
The technology does not require hole drilling and metal coating processes because the conducting paths are completely composed of aluminum, and the dielectric is made of high-quality ceramics. The process is simple, low cost and requires a limited number of technological operations.
The technology is a broad process platform and is used in different electronics products, such as microwave electronics, SiP systems (System in Package), SOC systems (System on Chip), 3D memory stacks, MEMS and NEMS micromechanical devices, high-capacity modules, Peltier elements, etc.